Accession Number : ADA115403
Title : Study of the Electronic Surface States of III-V Compounds and Silicon.
Descriptive Note : Semi-Annual technical progress rept. 1 Oct 80-31 Mar 81,
Corporate Author : STANFORD UNIV CA STANFORD ELECTRONICS LABS
Personal Author(s) : Spicer,W E ; Lindau,I
PDF Url : ADA115403
Report Date : 31 Mar 1981
Pagination or Media Count : 81
Abstract : Our work has continued to progress in several areas. We list here the topics that comprise the majority of our efforts: Si-Metal Contacts; Laser Enhanced Oxidation of GaAs (110); Oxygen Chemisorption on GaAs (110); Interface Between GaAs-Cs, O, and Vacuum in NEA Photocathodes; Interaction of Oxygen with Si (111); and Adsorption of Column III and V Elements on GaAs.
Descriptors : *Surface chemistry, *Electronic states, *Group III compounds, *Group V compounds, *Laser beams, Silicon, Interactions, Electrons, Oxygen, Oxidation, Photocathodes, Lasers, Vacuum
Subject Categories : Physical Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE