Accession Number : ADA115683
Title : Atomic Arrangements and Electronic Properties of Semiconductor Surfaces and Interfaces.
Descriptive Note : Final rept. 1 Nov 80-31 Oct 81,
Corporate Author : XEROX PALO ALTO RESEARCH CENTER CA
Personal Author(s) : Chadi,D J ; Martin,Richard M
PDF Url : ADA115683
Report Date : 06 May 1982
Pagination or Media Count : 9
Abstract : The areas of research during the past 12 months have included: step-formation energies and domain orientation at Si(111) surfaces; the electronic structure of the Al-GaAs(110) surface chemisorption system; density-functional calculations of bulk properties of GaAs and of (100)GaAs-Ge interfaces; demonstration of the importance of correlation effects on the atomic and electronic structure of Si(111) surfaces; and derivation of an exact scaling law for the resistance of a thin wire for the one-dimensional Anderson model containing Loth diagonal and off-diagonal disorder.
Descriptors : *Semiconductors, *Surfaces, *Atomic structure, *Electronic states, Interfaces, Defects(Materials), Chemisorption, Silicon, Gallium arsenides, Germanium compounds, Models, Density, Computations
Subject Categories : Nuclear Physics & Elementary Particle Physics
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE