Accession Number : ADA115683

Title :   Atomic Arrangements and Electronic Properties of Semiconductor Surfaces and Interfaces.

Descriptive Note : Final rept. 1 Nov 80-31 Oct 81,

Corporate Author : XEROX PALO ALTO RESEARCH CENTER CA

Personal Author(s) : Chadi,D J ; Martin,Richard M

PDF Url : ADA115683

Report Date : 06 May 1982

Pagination or Media Count : 9

Abstract : The areas of research during the past 12 months have included: step-formation energies and domain orientation at Si(111) surfaces; the electronic structure of the Al-GaAs(110) surface chemisorption system; density-functional calculations of bulk properties of GaAs and of (100)GaAs-Ge interfaces; demonstration of the importance of correlation effects on the atomic and electronic structure of Si(111) surfaces; and derivation of an exact scaling law for the resistance of a thin wire for the one-dimensional Anderson model containing Loth diagonal and off-diagonal disorder.

Descriptors :   *Semiconductors, *Surfaces, *Atomic structure, *Electronic states, Interfaces, Defects(Materials), Chemisorption, Silicon, Gallium arsenides, Germanium compounds, Models, Density, Computations

Subject Categories : Nuclear Physics & Elementary Particle Physics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE