Accession Number : ADA115810

Title :   High-Pressure Gradient-Freeze Growth of Single Crystals of Indium Phosphide.

Descriptive Note : Final technical rept. 1 Jan-15 Aug 81,

Corporate Author : CRYSTAL SPECIALTIES INC MONROVIA CA

Personal Author(s) : Allred,Worth P

PDF Url : ADA115810

Report Date : Apr 1982

Pagination or Media Count : 12

Abstract : Large polycrystalline InP ingots weighing up to 2,000 gms have been compounded in a gradient-freeze internally pressure balanced growth system. Ingots grown in the system have an impurity level of about 2 x 10 to the 16th power atoms/cc. This system promises to be a method by which polycrystalline and possibly single crystals can be grown in a few hours and at a reasonable cost.

Descriptors :   *Single crystals, *Indium phosphides, *Crystal growth, *Freezing, Semiconductors, High pressure, Gradients, Impurities, Synthesis(Chemistry), Phosphorus, Stoichiometry, Costs, Polycrystalline

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE