Accession Number : ADA115810
Title : High-Pressure Gradient-Freeze Growth of Single Crystals of Indium Phosphide.
Descriptive Note : Final technical rept. 1 Jan-15 Aug 81,
Corporate Author : CRYSTAL SPECIALTIES INC MONROVIA CA
Personal Author(s) : Allred,Worth P
PDF Url : ADA115810
Report Date : Apr 1982
Pagination or Media Count : 12
Abstract : Large polycrystalline InP ingots weighing up to 2,000 gms have been compounded in a gradient-freeze internally pressure balanced growth system. Ingots grown in the system have an impurity level of about 2 x 10 to the 16th power atoms/cc. This system promises to be a method by which polycrystalline and possibly single crystals can be grown in a few hours and at a reasonable cost.
Descriptors : *Single crystals, *Indium phosphides, *Crystal growth, *Freezing, Semiconductors, High pressure, Gradients, Impurities, Synthesis(Chemistry), Phosphorus, Stoichiometry, Costs, Polycrystalline
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE