Accession Number : ADA115867

Title :   Development of Charge Transfer Devices for 1-2 Micron Imaging.

Descriptive Note : Final rept. 6 Sep 79-31 Jan 81,

Corporate Author : ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER

Personal Author(s) : Milano,R A ; Liu,Y Z ; Anderson,Robert J ; Cohen,Marshall J

PDF Url : ADA115867

Report Date : Mar 1981

Pagination or Media Count : 46

Abstract : Currently no satisfactory solid state imaging device exists for use in near infrared applications. While transmission photocathodes are most often used, their spectral response rapidly falls off for lambda or = 0.99 micrometers due to the minimum vacuum level which can be achieved with a cesiated III-V semiconductor surface. These devices are thus suitable for use in those night vision systems which operate in the visible or near-infrared spectrum under low level moonlight and starlight illumination. (Author)

Descriptors :   *Infrared detectors, *Charge transfer, *Charge coupled devices, *Infrared images, *Night vision devices, Photocathodes, Near infrared radiation, Spectra, Group III compounds, Group V compounds, Epitaxial growth, Schottky barrier devices, Semiconductors, Gallium antimonides, Heterojunctions, Quantum efficiency, Hardening, Thermal stability, Etching, Surface properties, Fabrication, Solid state electronics

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE