Accession Number : ADA116162

Title :   Control of GaAs Microwave Schottky Diode Electrical Characteristics by Contact Geometry: The Gap Diode.

Descriptive Note : Technical rept.,

Corporate Author : WASHINGTON UNIV SEATTLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Teng,S J J ; Goldwasser,R E ; Rosenbaum,F J

PDF Url : ADA116162

Report Date : May 1982

Pagination or Media Count : 104

Abstract : This report presents a new low turn-on Schottky diode, whose I-V characteristics can be controlled by an ohmic gap between Schottky-barrier regions. A survey of barrier-height control techniques and the physics of Schottky-barrier and ohmic contacts is presented. Simple design theories for two types of gap-controlled diodes are discussed. GaAs VPE growth and diode microfabrication procedures are described and results are evaluated. The I-V characteristics, temperature sensitivity, and mixer conversion loss of packaged diodes have been measured. The physical properties and evaluation results of the device are discussed. (Author)

Descriptors :   *Gallium arsenides, *Schottky barrier devices, *Diodes, *Microwave equipment, Millimeter waves, Control, Physical properties, Packaged circuits, Sensitivity, Conversion, Losses, Mixers(Electronics), Theory, Experimental design

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics
      Radiofrequency Wave Propagation

Distribution Statement : APPROVED FOR PUBLIC RELEASE