Accession Number : ADA116260

Title :   Manufacturing Technology Program for High Burnout Silicon Schottky-Barrier Mixer Diodes for Navy Air-to-Air Avionics.

Descriptive Note : Final rept. May 79-Nov 81,


Personal Author(s) : Anand,Yoginder ; Ellis,Steven

PDF Url : ADA116260

Report Date : Feb 1982

Pagination or Media Count : 123

Abstract : This report describes the establishment of low cost semiconductor processes to manufacture low-barrier-height high-burnout X-band silicon Schottky barrier diodes in production quantities. These devices are thermal-compression-bonded in a rugged low-cost pill (ODS-119) package. They exhibit an overall low noise figure of 7.0 dB (single side band) at 0.5 mW of local oscillator power level and RF burnout of 12 watts (tau = 1 microsec and 1000 Hz rep. rate). Reliability and ruggedness of the design has been demonstrated by tests taken from MIL.S 19500 F. (Author)

Descriptors :   *Manufacturing, *Methodology, *Schottky barrier devices, *Diodes, Semiconductors, Radar equipment, Burnout, Pilot studies, Air to air, Avionics, Sidebands, K band, Radiofrequency, Low costs, Production, Local oscillators

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE