Accession Number : ADA116457

Title :   GaAs Surface Passivation for Device Applications.

Descriptive Note : Interim rept. no. 4, 15 Dec 79-14 Jun 80,

Corporate Author : HUGHES RESEARCH LABS MALIBU CA

Personal Author(s) : Anderson,C L ; Clark,M D

PDF Url : ADA116457

Report Date : Dec 1980

Pagination or Media Count : 25

Abstract : This report describes the progress in the fourth six-month period of a program to develop deposited dielectrics for GaAs device applications. Three applications of the dielectrics are being investigated: (1) isolation of control electrodes, (2) passivation of the GaAs surface, and (3) encapsulation of completed circuits. The dielectrics being studied include silicon oxynitride; mixtures of silicon nitride and germanium nitride; and mixtures of silicon dioxide, gallium oxide, and aluminum oxide. During this reporting period, studies of the interface properties of pyrolytically deposited Si3N4 on n-type GaAs under illuminated conditions were performed. The data obtained are consistent with the interpretation that inversion of the GaAs surface is being achieved. In addition, process parameters for plasma-enhanced deposition of silicon nitride films with low oxygen content and refractive index near that of stoichiometric Si3N4 were determined. Evaluation of the interface properties of SiO2 films deposited on GaAs by photochemical deposition is also reported. (Author)

Descriptors :   *Semiconductor devices, *Gallium arsenides, *Passivity, *Surfaces, Deposition, Dielectrics, Silicon dioxide, Oxides, Germanium, Nitrides, Mixtures, Oxynitrides, Refractive index, Films, Aluminum, Low rate, Oxygen, Photochemical reactions

Subject Categories : Physical Chemistry
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE