Accession Number : ADA116656

Title :   Electron Device Contact Studies.

Descriptive Note : Final rept. 1 Nov 76-31 Mar 81,


Personal Author(s) : Wigen,Philip E ; Thurston,Marlin O

PDF Url : ADA116656

Report Date : May 1982

Pagination or Media Count : 174

Abstract : This report describes the initial half of a program of investigation and characterization of contacts made to GaAs. A theoretical model of contact behavior based on electron tunneling is adapted to GaAs and will be used to compare experimental results of Au contacts fabricated on Sn diffused, n-type, GaAs surface layers. The fabrication of n-type layers using spin-on dopant sources and a semi closed chamber, in an open tube diffusion process are explained. The characterization of contact performance with a value of specific contact resistance, Rc, and the measurement of Rc using the transfer length method are covered. Investigation into In-au GaAs alloyed type contacts is also presented. (Author)

Descriptors :   *Electric contacts, *Electrons, *Tunneling(Electronics), *Gallium arsenides, P type semiconductors, Fabrication, Gold, Ohmmeters, Experimental data, Theory, Tin compounds, Surfaces, Layers

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE