Accession Number : ADA116843

Title :   GaAs Surface Passivation for Device Applications.

Descriptive Note : Final rept. 15 Jun 78-15 Jun 81,


Personal Author(s) : Anderson,C L ; Clark,M D

PDF Url : ADA116843

Report Date : Mar 1982

Pagination or Media Count : 76

Abstract : This report describes the progress achieved during a three-year program to develop deposited dielectrics for GaAs device applications. Three applications of dielectrics have been investigated within this program: (1) isolation of control electrodes, (2) passivation of the GaAs surface, and (3) encapsulation of completed circuits. Deposition techniques employed were plasma-enhanced deposition (PED), pyrolytic chemical vapor deposition (CVD), and photo-chemical deposition (PCD). Plasma-enhanced dielectrics suitable for applications (1) and (3) were developed under Hughes internal funding early in the course of the program. Accordingly, the program was streamlined to concentrate on application (2).

Descriptors :   *Metal oxide semiconductors, *Gallium arsenides, *Passivity, *Surfaces, Insulation, Thin films, Dielectrics, Layers, Field effect transistors, Encapsulation, Deposition, Electrodes, Isolation, Vapor deposition, Pyrolysis, Control

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE