Accession Number : ADA116861

Title :   Three-Dimensional Numerical Studies of the Physics of Semiconductor Crystal Growth.

Descriptive Note : Final rept. 1 Jan-30 Jun 82 on Phase 1,


Personal Author(s) : Liu,N S ; Shamroth,S J ; Grubin,H L

PDF Url : ADA116861

Report Date : Jul 1982

Pagination or Media Count : 43

Abstract : The primary purpose of the Phase I study was to establish the feasibility of developing reliable theories with predictive capability in the area of crystal growth. Within the guidelines of the DESAT program the proposed study was limited to an area where some computational fluid dynamic studies have already appeared and where numerous experimental results have been reported; namely, the area of Czochralski crystal pulling. The intent of the study was to generalize all previously developed work, and to incorporate three-dimensional effects, which invariably arise when stirring is included. For Czochralski growth nonaxisymmetric effects were formulated and numerical simulations were performed for two cases: (1) a local hot spot on the crucible wall, and (2) angular misalignment between the crystal and crucible rotational axes.

Descriptors :   *Semiconductors, *Czochralski crystals, *Crystal growth, *Numerical analysis, Three dimensional, Predictions, Computations, Fluid mechanics, Theory, Feasibility studies, Melts, Hot spots, Simulation, Hydrodynamics, Equations

Subject Categories : Numerical Mathematics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE