Accession Number : ADA117394

Title :   CO2 Laser Waveguiding in GaAs MBE Layers.

Descriptive Note : Conference paper,

Corporate Author : ARMY ARMAMENT RESEARCH AND DEVELOPMENT COMMAND DOVER NJ FIRE CONTROL AND SMALL CALIBER WEAPON SYSTEMS LAB

Personal Author(s) : Jenkinson,Howard A ; Zavada,John M

PDF Url : ADA117394

Report Date : 18 Jun 1982

Pagination or Media Count : 10

Abstract : In this report, experimental analyses of the electronic and optical properties of a prototype single layer MBE (Molecular Beam Epitaxy) waveguide are presented. A polished (100) wafer of n(+)-GaAs heavily doped with silicon was used as the waveguide substrate. The free carrier concentration was approximately 3 x 10 to the 18th power/cc. An epitaxial layer of n-GaAs lightly doped with tin was then grown on the substrate. The carrier concentration of the epitaxial layer was targeted to be 3 - 5 x 10 to the 15th power/cc.

Descriptors :   *Carbon dioxide lasers, *Waveguides, *Integrated circuits, Optical equipment, Gallium arsenides, Molecular beams, Epitaxial growth, Layers, Doping, Substrates, Charge carriers, Infrared detectors, Long wavelengths, Radar, Miss distance, Signal processing

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE