Accession Number : ADA117394
Title : CO2 Laser Waveguiding in GaAs MBE Layers.
Descriptive Note : Conference paper,
Corporate Author : ARMY ARMAMENT RESEARCH AND DEVELOPMENT COMMAND DOVER NJ FIRE CONTROL AND SMALL CALIBER WEAPON SYSTEMS LAB
Personal Author(s) : Jenkinson,Howard A ; Zavada,John M
PDF Url : ADA117394
Report Date : 18 Jun 1982
Pagination or Media Count : 10
Abstract : In this report, experimental analyses of the electronic and optical properties of a prototype single layer MBE (Molecular Beam Epitaxy) waveguide are presented. A polished (100) wafer of n(+)-GaAs heavily doped with silicon was used as the waveguide substrate. The free carrier concentration was approximately 3 x 10 to the 18th power/cc. An epitaxial layer of n-GaAs lightly doped with tin was then grown on the substrate. The carrier concentration of the epitaxial layer was targeted to be 3 - 5 x 10 to the 15th power/cc.
Descriptors : *Carbon dioxide lasers, *Waveguides, *Integrated circuits, Optical equipment, Gallium arsenides, Molecular beams, Epitaxial growth, Layers, Doping, Substrates, Charge carriers, Infrared detectors, Long wavelengths, Radar, Miss distance, Signal processing
Subject Categories : Electrical and Electronic Equipment
Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE