Accession Number : ADA117507
Title : Growth and Characterization of In(1-x)Ga(x)As(y)P(1-y) and GaAs Using Molecular Beam Epitaxy.
Descriptive Note : Final rept. 9 Feb 79-30 Sep 81,
Corporate Author : GEORGIA INST OF TECH ATLANTA ENGINEERING EXPERIMENT STATION
Personal Author(s) : Holah,G. D. ; Meeks,E. L. ; Eisele,F. L. ; Covington,D. W.
Report Date : FEB 1982
Pagination or Media Count : 85
Abstract : This report describes the technical accomplishments of a two-year basic research program directed towards a study of GaAs and the quaternary III-V alloy system, In(1-x)Ga(x)As(y)P(1-y), grown by molecular beam epitaxy (MBE). Layers suitable for application of these materials, together with related binary and ternary systems, to microwave, millimeter and optical devices were targeted. Doping profiles in GaAs which are difficult to produce by techniques other than MBE and which potentially offer enhanced characteristics for specific GaAs microwave and millimeter wave devices have been produced. InAs layers grown on InGaAs buffer layers have exhibited electron mobilities exceeding 30,000 cm(2)V(-1)s(-1) at 77 deg K. InP layers have been grown and analyzed using photoluminescence which demonstrated the existence of iron out-diffusion from the Fe-doped InP substrate. InGaAs layers grown in a heterostructure FET system showed an improvement in electron mobilities over those of GaAs FETs grown under similar conditions.
Descriptors : *Molecular beams, *Epitaxial growth, *Gallium arsenides, *Semiconductors, Photoluminescence, Electron mobility, doping, Profiles, Millimeter waves, Optical equipment, Substrates, Ternary compounds, Quaternary compounds, Microwave equipment
Subject Categories : Particle Accelerators
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE