Accession Number : ADA117525

Title :   Equilibrium Noise in Ion Selective Field Effect Transistors.

Descriptive Note : Interim technical rept.,

Corporate Author : UTAH UNIV SALT LAKE CITY DEPT OF BIOENGINEERING

Personal Author(s) : Haemmerli,Andre M ; Janata,Jiri ; Brophy,James J

PDF Url : ADA117525

Report Date : 21 Jul 1982

Pagination or Media Count : 36

Abstract : It has been shown that noise which is in excess of the semiconductor device noise can be identified with the electrochemical processes taking place in ISFETs. The frequency analysis of this noise yields information about interfacial capacitance and exchange current density at the membrane/solution interface. These parameters have been evaluated for several ion-selective membranes.

Descriptors :   *Field effect transistors, *Semiconductor devices, *Noise, *Ions, *Electrochemistry, Selection, Current density, Ion exchange, Capacitance, Solutions(Mixtures), Membranes, Frequency

Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE