Accession Number : ADA117525
Title : Equilibrium Noise in Ion Selective Field Effect Transistors.
Descriptive Note : Interim technical rept.,
Corporate Author : UTAH UNIV SALT LAKE CITY DEPT OF BIOENGINEERING
Personal Author(s) : Haemmerli,Andre M ; Janata,Jiri ; Brophy,James J
PDF Url : ADA117525
Report Date : 21 Jul 1982
Pagination or Media Count : 36
Abstract : It has been shown that noise which is in excess of the semiconductor device noise can be identified with the electrochemical processes taking place in ISFETs. The frequency analysis of this noise yields information about interfacial capacitance and exchange current density at the membrane/solution interface. These parameters have been evaluated for several ion-selective membranes.
Descriptors : *Field effect transistors, *Semiconductor devices, *Noise, *Ions, *Electrochemistry, Selection, Current density, Ion exchange, Capacitance, Solutions(Mixtures), Membranes, Frequency
Subject Categories : Physical Chemistry
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE