Accession Number : ADA117729

Title :   Characterization of Infrared Optical Properties of Layered Semiconductors.

Descriptive Note : Annual scientific rept. 1 Apr 81-31 Mar 82,

Corporate Author : CALIFORNIA UNIV LOS ANGELES DEPT OF PHYSICS

Personal Author(s) : Braunstein,Rubin

PDF Url : ADA117729

Report Date : 20 Mar 1982

Pagination or Media Count : 17

Abstract : The techniques of infrared wavelength modulation and the techniques of photo-induced-transients-spectroscopy were used to study the electronic structure and lattice dynamics of semiconductors. These studies have included: (1) the assessment of homogeneity of doping and strain in layer semiconductors; (2) the electronic structure of deep levels by wavelength modulation; and (3) study of deep levels by photoinduced transients spectroscopy. The present work was primarily directed toward GaAs and Si. (Author)

Descriptors :   *Semiconductors, *Layers, *Infrared optical materials, Doping, Lattice dynamics, Electronic states, Frequency modulation, Infrared radiation, Frequency, Spectroscopy, Silicon, Gallium arsenides

Subject Categories : Optics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE