Accession Number : ADA117884

Title :   Radiation Damage and Annealing Effects Studies of Silicon-Implanted Gallium Arsenide.

Descriptive Note : Final rept. Apr-Dec 81,

Corporate Author : WRIGHT STATE UNIV DAYTON OHIO DEPT OF PHYSICS

Personal Author(s) : Ling,Samuel C

PDF Url : ADA117884

Report Date : 31 Mar 1982

Pagination or Media Count : 15

Abstract : Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author)

Descriptors :   *Radiation damage, *Annealing, *Gallium arsenides, *Ion implantation, *Silicon, Selenium, Ions, Crystal lattices, Symmetry(Crystallography), Backscattering, Electron microscopy, X rays, Emission, Low temperature, High temperature, Epitaxial growth

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE