Accession Number : ADA118010

Title :   Ion-Beam Milling of Silicon Carbide Epitaxial Layers.

Descriptive Note : Final rept. 1 Jul 81-30 Jun 82,

Corporate Author : CALIFORNIA UNIV SAN DEIGO LA JOLLA DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES

Personal Author(s) : Wieder,H H

PDF Url : ADA118010

Report Date : 04 Aug 1982

Pagination or Media Count : 17

Abstract : Ion milling of photolithographically processed silicon carbide heteroepitaxially grown layers on Si is feasible using an aluminum mask which is produced by standard photolithographic procedures and techniques. (Author)

Descriptors :   *Etching, *Ion beams, *Silicon carbides, *Semiconductors, Ion sources, Guns, Plasma generators, Aluminum, Masks, Photolithography, Epitaxial growth, Layers, Silicon, Substrates, Vacuum deposition

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE