Accession Number : ADA118024
Title : Near Millimeter Wave Local Oscillator Sources Proof of Concepts.
Descriptive Note : Final rept. 31 May 80-31 May 82,
Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Coleman,Paul D ; Freeman,Jay
PDF Url : ADA118024
Report Date : Jul 1982
Pagination or Media Count : 87
Abstract : This final report describes research on the demonstration of a new solid state oscillator source principle in a GaAs/AlGaAs heterostructure. The negative differential resistance is based upon a real space transfer of hot electrons from a high mobility GaAs layer to a low mobility AlGaAs layer in the heterostructure. Tunable radiation in the 2-25 MHz range was achieved at a power level of 30 milliwatts in a first device. The potential exists to extend this oscillator into the 100-1000 GHz range since the transit time is associated with time of travel between the 100 A layers in the heterostructure.
Descriptors : *Local oscillators, *Gallium arsenides, Millimeter waves, Negative resistance circuits, Travel, Millimeter waves, Oscillators, Extremely high frequency, Thermal stability, Radiation, High rate, Time, Mobility, Tuning
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE