Accession Number : ADA118319

Title :   Optical Electronics and Infrared Radiation.

Descriptive Note : Final rept.10 Feb 79-9 Feb 82,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF PHYSICS

Personal Author(s) : Javan,Ali

PDF Url : ADA118319

Report Date : 09 Aug 1982

Pagination or Media Count : 16

Abstract : The work has progressed in several fronts. Following extensive previous work at the laboratory, properties of metal-barrier-metal submicron junctions have been explored, with respect to their high-speed responses, frequently mixing characterists, and the physical mechanisms accuring in the junction. The studies are done at cryogenic temperatures and relate to the properties of the mechanically contacted junctions, as well as thin film evaporated junctions. Emphasis is placed on high-speed features originating from rapid variation of the I-V characteristics over narrow ranges of bias voltages, causing sharp enhancements of the junctions IR responses at fixed bias fields. The model employed in the interpretation of the results is based on Fermi-level modulation by the applied high frequency field, determining the high speed current conduction properties of the junctions. (Author)

Descriptors :   *Infrared equipment, *Electronics, *Infrared lasers, Isotopes, Infrared radiation, Molecular spectroscopy, Work, Optical properties, Deuterium compounds, Cryogenics, Carbon dioxide lasers, Bias, Water vapor, Laboratories, Physical properties, Far infrared radiation, Temperature, Voltage

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers
      Atomic and Molecular Physics and Spectroscopy
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE