Accession Number : ADA118584
Title : Calculation of Cosmic-Ray Induced Soft Upsets and Scaling in VLSI Devices.
Descriptive Note : Memorandum rept.,
Corporate Author : NAVAL RESEARCH LAB WASHINGTON DC
Personal Author(s) : Shapiro,P ; Petersen,E L ; Adams,J H , Jr
PDF Url : ADA118584
Report Date : 26 Aug 1982
Pagination or Media Count : 43
Abstract : An analysis was carried out to explore the effect of size reduction on cosmic-ray induced errors in RAM's. This analysis uses a computational model and scaling procedure that are representative of those reported in current literature. Availability of various cosmic-ray environments make it possible to examine the effect of variations in the environment on predicted soft-upset rates. In addition, soft-upset rates have been calculated for the direct ionization due to protons in the radiation belts at an altitude of 600 nautical miles.
Descriptors : *Random access computer storage, *Memory devices, *Integrated circuits, *Errors, *Cosmic rays, *Metal oxide semiconductors, Protons, Ionizing radiation, Environments, Ionization, Radiation belts, Solar radiation, Spaceborne
Subject Categories : Atmospheric Physics
Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE