Accession Number : ADA118584

Title :   Calculation of Cosmic-Ray Induced Soft Upsets and Scaling in VLSI Devices.

Descriptive Note : Memorandum rept.,

Corporate Author : NAVAL RESEARCH LAB WASHINGTON DC

Personal Author(s) : Shapiro,P ; Petersen,E L ; Adams,J H , Jr

PDF Url : ADA118584

Report Date : 26 Aug 1982

Pagination or Media Count : 43

Abstract : An analysis was carried out to explore the effect of size reduction on cosmic-ray induced errors in RAM's. This analysis uses a computational model and scaling procedure that are representative of those reported in current literature. Availability of various cosmic-ray environments make it possible to examine the effect of variations in the environment on predicted soft-upset rates. In addition, soft-upset rates have been calculated for the direct ionization due to protons in the radiation belts at an altitude of 600 nautical miles.

Descriptors :   *Random access computer storage, *Memory devices, *Integrated circuits, *Errors, *Cosmic rays, *Metal oxide semiconductors, Protons, Ionizing radiation, Environments, Ionization, Radiation belts, Solar radiation, Spaceborne

Subject Categories : Atmospheric Physics
      Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE