Accession Number : ADA118800

Title :   Single Crystal Epitaxy and Characterization of Beta-SiC.

Descriptive Note : Final technical rept. 1 Jan-31 Dec 81,

Corporate Author : NORTH CAROLINA STATE UNIV RALEIGH DEPT OF MATERIALS ENGINEERING

Personal Author(s) : Davis,R F

PDF Url : ADA118800

Report Date : Jul 1982

Pagination or Media Count : 101

Abstract : Epitaxial thin films of beta-SiC of up to five microns in thickness have been reproducibly grown on (100) and (111) Si single crystal wafers. A two-step process involving the initial chemical conversion of the Si surface to SiC using C2H4 alone followed by direct CVD of SiC using both SiH4 and C2H4 was employed to achieve this objective. Theoretical CVD phase diagrams for the Si-C-H and Si-C-Ar system have been calculated for various reactive gases, Si/Si+C ratios, temperatures and total pressures. Amorphous Sic has also been produced using a remodeled rf sputtering unit. (Author)

Descriptors :   *Epitaxial growth, Single crystals, Silicon carbides, Thin films, Vapor deposition, Reactive gases, Chemical equilibrium, Sputtering, Silicon, Pressure gradients, Flow rate, Temperature gradients, Amorphous materials, Substrates, Reaction kinetics, Thermodynamics, Crystal structure, Phase diagrams

Subject Categories : Inorganic Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE