Accession Number : ADA118992

Title :   Growth of High Purity Oxygen-Free Silicon by Cold Crucible Techniques.

Descriptive Note : Final technical rept. 18 May 80-30 Nov 81,

Corporate Author : CERES CORP WALTHAM MA

Personal Author(s) : Wenckus,Joseph F ; Menashi,Wilson P

PDF Url : ADA118992

Report Date : Jun 1982

Pagination or Media Count : 111

Abstract : The goal of the program was to explore the feasibility of utilizing a cold crucible system for the growth of high purity, oxygen-free single crystals of silicon. The work included a detailed evaluation of previous research on cold crucible technology, the design and construction of a cold crucible assembly and the investigation of the growth of single crystals of high purity silicon utilizing the water-cooled cold crucible. In parallel with the experimental work, a theoretical analysis was carried out on the thermodynamics and heat flow characteristics within the melt confined in the cold crucible in an effort to develop a better understanding of the crystal growth process. The goals of the program have been achieved.

Descriptors :   *Cold working, *Crucibles, *Silicon, *Crystal growth, Single crystals, Purity, High rate, Oxygen, Low temperature, Theory, Thermodynamics

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE