Accession Number : ADA119189

Title :   Investigation of Impurity Concentration and Electrical Properties Near Interfaces.

Descriptive Note : Interim rept. 1 Feb 81-31 Jun 82,

Corporate Author : UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF MATERIALS SCIENCE

Personal Author(s) : Wittry,D B

PDF Url : ADA119189

Report Date : 08 Apr 1982

Pagination or Media Count : 37

Abstract : The problem of thermal conversation in semi-insulating gallium arsenide was examined using cathodoluminescence, photo-luminescence and secondary ion mass spectrometry. The results indicated that a key role is played by the formation of Si(as)-V(ga) complexes. (Author)

Descriptors :   *Concentration(Chemistry), *Gallium arsenides, *Ion implantation, *Electrical properties, Thermal properties, Conversion, Impurities, Interfaces, Cathodoluminescence, Photoluminescence, Mass spectroscopy, Heat treatment, Excitation, Density, Converters, Microelectronics, Measuring instruments

Subject Categories : Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE