Accession Number : ADA119264

Title :   Optical Properties of Small Band Gap Semiconductors Subject to Laser Excitation. Nonlinear Infrared Properties of Semiconductors.

Descriptive Note : Final technical rept. 1 Jan 77-28 Feb 82,

Corporate Author : CALIFORNIA INST OF TECH PASADENA

Personal Author(s) : McGill,T C ; Smith,D L

PDF Url : ADA119264

Report Date : Jan 1982

Pagination or Media Count : 199

Abstract : A theoretical and experimental study of the optical properties of small band gap semiconductors subject to laser excitation and the nonlinear infrared properties of small band gap semiconductors subject to laser excitation and the nonlinear infrared properties of semiconductors has been carried out. These studies have led to an understanding of the nonradiative recombination mechanisms due to impurities via an Auger process. Predictions about the role of radiative and nonradiative processes in narrow band gap semiconductors have been made. Experiments performed on HgCdTe alloys with different composition provided the first systematic study of photoluminescence in these alloys and gave data that supported the conclusions on the relative importance of radiative and nonradiative processes in alloys. The study of the nonlinear infrared properties in the semiconductors resulted in the first complete theory of the phenomenon. Experiments to measure the role of impurities on the saturation intensity have given results in good agreement with theory. (Author)

Descriptors :   *Lasers, *Semiconductors, *Excitation, *Recombination reactions, Optical properties, Photoluminescence, Auger electrons, Saturation, Impurities, Infrared radiation, Nonlinear systems

Subject Categories : Lasers and Masers
      Optics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE