Accession Number : ADA119534

Title :   Electronic Processes in InP and Related Compounds.

Descriptive Note : Final rept. 10 Oct 80-9 Oct 81,


Personal Author(s) : Vaidyanathan,K V ; Anderson,C L ; Dunlap,H L ; Kamath,G S

PDF Url : ADA119534

Report Date : Jul 1982

Pagination or Media Count : 53

Abstract : The growth and characterization of high-purity epitaxial layers grown by liquid-phase-epitaxy (LPE) are described. Chemical and electrical evaluation of the layers indicate that silicon and sulfur are the dominant residual donors in LPE-grown InP layes. Techniques for controlling these dopants are discussed. The current-voltage characteristics of Schottky diodes on p-InP are analyzed. Aluminum, silver, and gold were tried as Schottky-barrier metals. The results reported here demonstrate that Al is the best choice as the Schottky metal. An automated system has been used to measure the relative photoresponse from Schottky diodes. Photocurrent measurements due to pure electron and pure hole injection have been made as a function of bias applied to the sample. This data has been analyzed to yield ionization coefficients of electrons (alpha) and holes (beta) in InP. The results clearly demonstrate that holes have a larger ionization coefficient than electrons in InP. (Author)

Descriptors :   *Schottky barrier devices, *Indium phosphides, *P type semiconductors, *Ionization, *Semiconductor diodes, Epitaxial growth, Holes(Electron Deficiencies), Darkness, Electric current, Photoelectricity, Electrons, Liquid phases, Measurement, Helium, Neodymium lasers, Photoluminescence, Coefficients, Purity, Doping, Silicon, Vapors, Mass spectrometry, Auger electron spectroscopy

Subject Categories : Test Facilities, Equipment and Methods

Distribution Statement : APPROVED FOR PUBLIC RELEASE