Accession Number : ADA119647

Title :   Secondary Ion Mass Spectrometric Image Depth Profile Analysis of Thin Layers.

Descriptive Note : Interim technical rept.,

Corporate Author : CORNELL UNIV ITHACA NY DEPT OF CHEMISTRY

Personal Author(s) : Morrison,George H ; Chu,P K ; Harris,William C , Jr

PDF Url : ADA119647

Report Date : 22 Sep 1982

Pagination or Media Count : 24

Abstract : Image depth profiling is applied to the quantitative analysis of molecular beam epitaxially grown gallium arsenide thin layers. The technique involves the use of ion implantation through a mask and subsequent analysis by secondary ion mass spectrometry (SIMS). The proposed approach provides high accuracy results in the analysis of semiconductor thin layers. (Author)

Descriptors :   *Mass spectroscopy, *Ions, *Secondary, *Molecular beams, High rate, Thinness, Layers, Profiles, Images, Ion implantation, Quantitative analysis, Semiconductors, Accuracy

Subject Categories : Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE