Accession Number : ADA119733

Title :   Differential Sputtering Correction for Ion Microscopy Using Image Depth Profiling.

Descriptive Note : Interim technical rept.,

Corporate Author : CORNELL UNIV ITHACA NY BAKER LAB

Personal Author(s) : Patkin,Adam J ; Chandra,Subhash ; Morrison,George H

PDF Url : ADA119733

Report Date : 22 Sep 1982

Pagination or Media Count : 28

Abstract : A first-order correction for differential sputtering is made to ion micrographs using image depth profiling. This is done by first recording the ion image to be corrected, then sputtering down to the substrate while recording a series of images at the substrates's mass. A time-domain 'burn-through' map showing the time each location of the sample first sputters through to the substrate is then generated. This map is used to make a linear correction for differential sputtering induced ion intensity artifacts to the initial sample images. C(40)+ ion images of a radish root tip steel cell region on a tantalum substrate are corrected in this fashion. Relative sputtering rates of 1.5 and 1.2 compared to the cytoplasm were found for the cell walls and nuclei, respectively. (Author)

Descriptors :   *Ion beams, *Microscopy, *Sputtering, *Corrections, Images, Profiles, Recording systems, Substrates, Tantalum compounds, Differential equations

Subject Categories : Physical Chemistry
      Mfg & Industrial Eng & Control of Product Sys
      Particle Accelerators

Distribution Statement : APPROVED FOR PUBLIC RELEASE