Accession Number : ADA119879

Title :   Phase Diagram of III-V Compounds by the Step Grading Technique.

Descriptive Note : Final rept. 15 Dec 78-14 Jun 82,

Corporate Author : NORTH CAROLINA STATE UNIV RALEIGH DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Bedair,S M ; Morrison,C ; Hauser,J R

PDF Url : ADA119879

Report Date : Sep 1982

Pagination or Media Count : 12

Abstract : This research program has produced experimentally the phase diagrams of In-Ga-As, In-Ga-P and In-As-P ternary alloys for the first time over their entire composition range using liquid phase epitaxy techniques. A thermodynamical model based on the simple solution model was developed and more accurate values for several thermodynamical parameters based on extended solidus data for these ternary compounds were obtained. Also a model has been presented to account for the so-called lattice-pulling effect and has been successfully applied to the InGaP/GaAs system. Electrical and structural properties of the epitaxial layers have been studied. The Epitaxial growth of these ternaries both on GaAs and InP substrates assisted in the development of two devices: the cascade solar cell an a photodetector for the 1.8 to 2.0 micrometer range. (Author)

Descriptors :   *Group III compounds, *Group V compounds, *Phase diagrams, Indium compounds, Gallium compounds, Gallium arsenides, Phosphides, Thermodynamics, Mathematical models, Electrical properties, Epitaxial growth, Solar cells

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Thermodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE