Accession Number : ADA130021

Title :   Measurement and Theory of the Hall Scattering Factor and the Conductivity Mobility in Ultra Pure p-Type Silicon at Low Temperatures.

Descriptive Note : Interim technical rept. 1 Sep 81-31 Mar 83,


Personal Author(s) : Szmulowicz,Frank ; Mitchel,W ; Madarasz,Frank L ; Hemenger,Patrick M

PDF Url : ADA130021

Report Date : Apr 1983

Pagination or Media Count : 98

Abstract : Acoustic phonon-limited conductivity and Hall mobilities for p-type silicon and germanium have been calculated from solutions of the full Boltzmann equation without the relaxation time approximation. These quantities have been measured as well for p-type silicon in the temperature range 20-50K. Using the deformation potential scattering theory of Tiersten we obtain the necessary hole-acoustic phonon transition rates, with no adjustable parameters, as a first principles input to the transport equations. Excellent agreement is found for both mobilities with our experimental data on silicon. Calculated results were compared with data from the open literature on germanium and similar agreement is found for the conductivity mobility. The success of this calculation is due to the inclusion of all three top valence bands, careful treatment of the scattering matrix elements, and the use of the full Boltzmann equation solutions to obtain the transport coefficients. Results of our calculation confirm the quantitative accuracy of the deformation potential theory. (Author)

Descriptors :   *P type semiconductors, *Hall effect, *Scattering, *Measurement, *Silicon, Conductivity, Charge carriers, Deformation, Potential theory, Boltzmann equation, Germanium, Mobility, Potential scattering, Transport properties, Coefficients, Purity

Subject Categories : Electricity and Magnetism
      Nuclear Physics & Elementary Particle Physics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE