Accession Number : ADA130145

Title :   Reverse Bias Second Breakdown in Power Switching Transistors.

Descriptive Note : Final rept.,

Corporate Author : TEXAS TECH UNIV LUBBOCK

Personal Author(s) : Portnoy,W M

PDF Url : ADA130145

Report Date : May 1983

Pagination or Media Count : 62

Abstract : The second breakdown characteristics under reverse base drive have been investigated for two n-p-n power switching transistor structures using a non-destructive testing circuit. Three types of second breakdown have been identified, all occurring in a single device under different operating conditions. Primary mechanisms, neither of which involve a critical temperature, have been proposed for two of the types. The third type has not previously been reported, nor has a mechanism been proposed. The experimental evidence at this time excludes adiabatic heating as a principal cause of second breakdown in the test devices. (Author)

Descriptors :   *Transistors, *Nondestructive testing, *N type semiconductors, *P type semiconductors, *Switching circuits, Thermal stability, Test equipment, Bases(Transistors), Test methods, Breakdown(Electronic Threshold), Heating, Critical temperature, Energy, Drives(Electronics), Bias, Power equipment, Reversible, Circuits, Adiabatic conditions

Subject Categories : Electrical and Electronic Equipment
      Test Facilities, Equipment and Methods
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE