Accession Number : ADA130499

Title :   An Asymptotic Anslysis of Single-Junction Semiconductor Devices.

Descriptive Note : Technical summary rept.,

Corporate Author : WISCONSIN UNIV-MADISON MATHEMATICS RESEARCH CENTER

Personal Author(s) : Markovich,Peter A ; Ringhofer,C A ; Langer,E ; Selberherr,S

PDF Url : ADA130499

Report Date : Jun 1983

Pagination or Media Count : 67

Abstract : In this paper we present an analysis of the fundamental one-dimensional semiconductor equations describing potential, carrier, and current density distributions in single-junction semiconductor devices when an external voltage is applied to the contacts. We reformulate the model equations by appropriate scaling as a singularly perturbed two point boundary value problem for a system of nonlinear ordinary differential equations. The right-hand side of the system has a jump discontinuity with respect to the independent variable (space-coordinate) representing the junction between differently doped sides of the device. The solution components are assumed to be continuous across this junction. (Author)

Descriptors :   *Semiconductor devices, *Asymptotic series, *Differential equations, Layers, Internal, Perturbation theory, Variables, Numerical analysis

Subject Categories : Numerical Mathematics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE