Accession Number : ADA130745

Title :   Electronic Properties of Semiconductor Interfaces.

Descriptive Note : Final technical rept. Dec 81-Feb 83,

Corporate Author : UNIVERSIDAD AUTONOMA DE MADRID (SPAIN) DEPT DE FISICA DEL ESTADO SOLIDO

Personal Author(s) : Flores,F ; Tejedor,C ; Guinea,F ; Sanchez-Dehesa,J

PDF Url : ADA130745

Report Date : Feb 1983

Pagination or Media Count : 102

Abstract : The objective was to analyze the electronic properties of different semiconductor interfaces. The Wannier function formalism has been applied to the GaAs-AlAs (111) and (100) heterojunctions and superlattices. Ionic relaxations, band discontinuities and interface states have been obtained. Abrupt Si-metal interfaces and Si-interlayer-metal junctions have been analyzed by means of a selfconsistent tight-binding approach. The barrier height has been obtained by calculating the interface density of states and the neutral level of the junction. Our results show that the barrier height is mainly determined by the coupling between the semiconductor and the last layer just sitting on top of the same semiconductor. (Author)

Descriptors :   *Metal oxide semiconductors, *Electron density, *Electronic states, *Computations, *Interfaces, Heterojunctions, Semiconductors, Diffusion, Etching, Superconductors, Ions, Relaxation

Subject Categories : Numerical Mathematics
      Plasma Physics and Magnetohydrodynamics
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE