Accession Number : ADA130776

Title :   Study of Deep-Level Defects and Transport Properties vs Growth Parameters and Annealing Conditions in III-V Compound Semiconductors.

Descriptive Note : Annual technical rept. 11 Jun 82-10 Jun 83,

Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Li,Sheng S

PDF Url : ADA130776

Report Date : 10 Jun 1983

Pagination or Media Count : 111

Abstract : The objectives of this research program are: (1) To investigate the grown-in defects and the effects of thermal and laser annealing on the grown-in defects in LEC grown Zn-doped InP, (2) to study the transport properties in n-type InP, (3) to characterize the grown-in defects vs annealing temperature in the LEC grown GaAs, and compare the deep-level defects in the MOCVD grown GaAs on semi-insulating GaAs- and Ge- substrates, (4) to study the one-MeV electron radiation induced deep level defects in LPE grown GaAs and the effects of thermal annealing on these defects. Deep-level Transient Spectroscopy (DLTS) Capacitance-Voltage (C-V), Current-Voltage (I-V), Resistivity, and Hall effect measurements were employed to study the deep-level defects and transport properties vs growth parameters and annealing conditions in GaAs and InP specimens. (Author)

Descriptors :   *Semiconductors, *Group III compounds, *Group V compounds, *Annealing, Electron mobility, *Crystal growth, Transport properties, Defects(Materials), Depth, Gallium arsenides, Indium phosphides, Epitaxial growth, Electron density, Trapping(Charged Particles)

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE