Accession Number : ADA131288

Title :   Laser Chemical Etching of Vias in GaAs.

Descriptive Note : Technical rept.,

Corporate Author : AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAB

Personal Author(s) : Tucker,Armin W ; Birnbaum,Milton

PDF Url : ADA131288

Report Date : 15 Jun 1983

Pagination or Media Count : 18

Abstract : Rapid drilling of vias in thick wafers (381 micons) of GaAs has been achieved by a laser assisted etching process. The technique utilized a CW visible argon ion laser and an etchant gas of low pressure C12. Data on the dependence of the etch rate on the laser power, wavelength and C12 gas pressure are presented.

Descriptors :   *Laser beams, *Drilling, *Etching, *Wafers, Chemical milling, Gallium arsenides, Quick reaction, Processing, Chlorine, Low pressure, Power, Frequency

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE