Accession Number : ADA131288
Title : Laser Chemical Etching of Vias in GaAs.
Descriptive Note : Technical rept.,
Corporate Author : AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAB
Personal Author(s) : Tucker,Armin W ; Birnbaum,Milton
PDF Url : ADA131288
Report Date : 15 Jun 1983
Pagination or Media Count : 18
Abstract : Rapid drilling of vias in thick wafers (381 micons) of GaAs has been achieved by a laser assisted etching process. The technique utilized a CW visible argon ion laser and an etchant gas of low pressure C12. Data on the dependence of the etch rate on the laser power, wavelength and C12 gas pressure are presented.
Descriptors : *Laser beams, *Drilling, *Etching, *Wafers, Chemical milling, Gallium arsenides, Quick reaction, Processing, Chlorine, Low pressure, Power, Frequency
Subject Categories : Electrical and Electronic Equipment
Lasers and Masers
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE