Accession Number : ADA131301

Title :   Photoluminescent Properties of n-GaAs Electrodes: Applications of the Dead-Layer Model to Photoelectrochemical Cells.

Descriptive Note : Technical rept.,

Corporate Author : WISCONSIN UNIV-MADISON DEPT OF CHEMISTRY

Personal Author(s) : Hobson,William S ; Ellis,Arthur B

PDF Url : ADA131301

Report Date : 26 Jul 1983

Pagination or Media Count : 20

Abstract : Single-crystal samples of n-type GaAs have been used as electrodes in photoelectrochemical cells (PECs) employing aqueous ditelluride electrolyte. Photoluminescence (PL) from the electrodes can be quenched by the electric field present in the semiconductor during PEC operation. The extent of PL quenching, studied as a function of carrier concentration, excitation wavelength, and applied potential, is consistent with the dead-layer model previously used to describe PL quenching in semiconductor/metal, Schottky-barrier systems. PL quenching curves calculated by assuming that the dead-layer thickness varies with applied potential in the same manner as the depletion width differ from the experimental data, particularly in the region near the flat-band potential. Sources of these discrepancies are discussed, including the possibility that relative PL intensity reflects the manner in which applied potential is partitioned across the semiconductor-electrolyte interface. (Author)

Descriptors :   *Gallium arsenides, *Electrodes, *Photoluminescence, Single crystals, Photochemical reactions, Semiconductors, Electrolytes, Tellurides, Photoelectric cells(Semiconductor), Optical properties, Quenching

Subject Categories : Physical Chemistry
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE