Accession Number : ADA131347

Title :   Semiconductor Surface Characterization Using Transverse Acoustoelectric Voltage versus Voltage Measurements.

Descriptive Note : Annual rept. 1 Aug 81-31 Oct 83,

Corporate Author : RENSSELAER POLYTECHNIC INST TROY NY DEPT OF ELECTRICAL COMPUTER AND SYSTEMS ENGINEERING

Personal Author(s) : Davari,B ; Das,Pankaj K

PDF Url : ADA131347

Report Date : Oct 1982

Pagination or Media Count : 9

Abstract : An alternative to Capacitance-Voltage (C-V) measurement is experimentally demonstrated. This technique measures the Transverse Acoustoelectric Voltage (TAV) as a function of applied D.C. voltage across the semiconductor. The technique is nondestructive and is applied to uniformly doped Si samples. Surface properties such as the flat band voltage, oxide charge and the zero bias surface condition are determined. P.S. An annual interim report is being accepted as the Final report for AFOSR-77-3426. The technical effort is being continued for one year under AFOSR-82-0281. The Final report for this continuation will contain more overall detail and should be considered as the final report for the entire technical effort. (Author)

Descriptors :   *Semiconductors, *Surface properties, *Surface acoustic wave devices, Surfaces, Measurement, Voltage, Capacitance, Silicon, Oxides, Bias, Direct current, Doping

Subject Categories : Physical Chemistry
      Line, Surface and Bulk Acoustic Wave Devices
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE