Accession Number : ADA131375

Title :   Reliability Analysis of the Gradual Degradation of Semiconductor Devices.

Descriptive Note : Technical rept.,

Corporate Author : AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAB

Personal Author(s) : Millea,Michael F

PDF Url : ADA131375

Report Date : 20 Jul 1983

Pagination or Media Count : 48

Abstract : A review of the recent results on accelerated aging of both power and low-noise GaAs FETs indicates that the major failure mode occurs by gradual deterioration and not by the usually (implicity) assumed catastrophic device failure. It is shown that assuming catastrophic degradation when devices actually fail gradually can lead to incorrect device reliability predictions. The analysis of accelerated aging results for a gradual degradation failure mode is indicated. (Author)

Descriptors :   *Field effect transistors, *Gallium arsenides, *Semiconductor devices, Reliability, Aging(Materials), Accelerated testing, Predictions, Degradation, Deterioration, Failure

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE