Accession Number : ADA131841

Title :   Growth and Characterization of InP and InGaAs Films Using the Hydride VPE Technique.

Descriptive Note : Final rept. 22 Oct 81-22 Oct 82.


PDF Url : ADA131841

Report Date : 21 Oct 1982

Pagination or Media Count : 76

Abstract : The advantages of the hydride growth technique are that the control is good because the anion and cation concentrations are separately controlled, and it can be easily scaled up. The disadvantage are that the films tend to have a higher background carrier concentration and a more rough morphology. The focus of this research was to find ways to itigate or possibly eliminate these disadvantages. An in-depth theoretical comparison between the chloride and hydride growth techniques showed that hydride growth is thermodynamically similar to steady state chloride growth when the HC1:PH3 ratio is 3:1. If chloride systems are inherently cleaner than hydride systems it is possibly due to the cleaning reaction of the phosphorus with the liquid indium to form InP with a subsequent attack of the InP by HC1. However, it seems more likely that the source of the higher carrier concentration is due to the less pure HC1 used. We showed this by growing lower carrier concentration InP films when we used HC1 generated from ultrapure PC13.

Descriptors :   *Semiconducting films, *Crystal growth, *Hydrides, Indium phosphides, Gallium arsenides, Hydrochloric acid, Synthesis(Chemistry), Chemical reactions, Data acquisition, Theory

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE