Accession Number : ADA131925

Title :   Surface and Interfacial Properties of Ga(0.47)In(0.53)As Alloys.

Descriptive Note : Final rept. 1 Apr 82-31 Mar 83,

Corporate Author : CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES

Personal Author(s) : Wieder,H H

PDF Url : ADA131925

Report Date : 26 Jul 1983

Pagination or Media Count : 45

Abstract : High frequency C-V measurements and quasi-static gate-controlled galvanomagnetic measurements have confirmed theoretical predictions that the surface Fermi level of Ga0.47In0.53As is pinned by lattice defect-related surface states at approximately 0.55 eV above the valence band edge. The total dnesity of the donor and acceptor centers, related to these defects, is two to three orders smaller than those of InP and the respective barrier heights of n and p-type Ga0.47In0.53As-metal contacts are consistent with the equilibrium surface Fermi level of A1203 as well as other dielectric-Ga0.47In0.53As interfaces. (Author)

Descriptors :   *Gallium arsenides, *Semiconductors, *Surface properties, Indium compounds, Fermi surfaces, Dielectrics, Interfaces, Crystal defects, Valence bands, Electron acceptors, Barriers

Subject Categories : Physical Chemistry
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE