Accession Number : ADA132332

Title :   Fabrication of a Silicon MOSFET Device with Bipolar Transistor Source,

Corporate Author : HAWAII UNIV AT MANOA HONOLULU DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Okada,David N

PDF Url : ADA132332

Report Date : Jul 1980

Pagination or Media Count : 109

Abstract : A series of MOS devices evolving the direct integration of a Si MOSFET and a bipolar transistor into a single four terminal device is described. The final device, termed an MOSBJT is shown to exhibit gain and novel electronic characteristics. (Author)

Descriptors :   *Bipolar transistors, *Mosfet semiconductors, *Junction transistors, *Silicon, P type semiconductors, Substrates, Masking, Etching, Channels, Sources, Bias, Doping, Gain, Electronics, Integration, Theses

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE