Accession Number : ADA132333
Title : A Rectangular Gate Merged MOSBJT.
Descriptive Note : Rept. no. 1 (Final),
Corporate Author : HAWAII UNIV AT MANOA HONOLULU DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Okada,David ; Holm-Kennedy,James W
PDF Url : ADA132333
Report Date : Jan 1981
Pagination or Media Count : 28
Abstract : The design, fabrication and device characteristics of a rectangular gate MOSBJT are described. The characteristics are explained in terms of the merged character of the device and the self biasing effects of the distributed collector current on the collector channel/base bias. For sufficiently high collector currents a portion of the collector channel is self-biased resulting in a decreased beta. The active area of the device is then controlled by the device operating bias.
Descriptors : *Junction transistors, *Bipolar transistors, *Silicon, *Metal oxide semiconductors, *Gates(Circuits), Electric contacts, Sources, Rectangular bodies, Distribution, Aluminum, Silicon dioxide, Substrates, Bias
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE