Accession Number : ADA132351

Title :   Numerical Modeling of the MOSBJT.

Descriptive Note : Rept. no. 2 (Final),

Corporate Author : HAWAII UNIV AT MANOA HONOLULU DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Okada,David ; Holm-Kennedy,James W

PDF Url : ADA132351

Report Date : Jul 1983

Pagination or Media Count : 27

Abstract : A totally merged MOSFET and BJT has been proposed. The device exhibits complicated-non-linear characteristics under certain operating conditions. Due to the distributed character of this novel merged device, a straightforward lumped device approach is not adequate. A distributed model is proposed and analyzed using numerical techniques. The active device area is shown to be affected by bias and contributes to the non-linear character of the characteristics under suitable conditions. Several gate shapes are treated. (Author)

Descriptors :   *Junction transistors, *Bipolar transistors, *MOSFET semiconductors, Bases(Transistors), Mathematical models, Silicon, Gates(Circuits), Aluminum, Nonlinear systems, Oxides, Equivalent circuits, Emitters, Distribution, Bias, Flow charting, Models, Approach, Shape

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE