Accession Number : ADA132363

Title :   Subbanding, Charge Transport and Related Applications in Semiconductor Devices.

Descriptive Note : Annual rept.,


Personal Author(s) : Holm-Kennedy,J W

PDF Url : ADA132363

Report Date : Oct 1977

Pagination or Media Count : 166

Abstract : The project is concerned with the investigation of quantization, charge transport and applications in two dimensional subbanding systems including MOSFET and various junction field effect configurations. The degree of subbanding to be expected in various semiconductor materials has been characterized for different channel doping densities, temperatures and surface orientation. The materials treated here are (110) and (111) Si, n-GaAs, n-InP, n-InAs and n-InSb. Results for both buried conducting channels and surface conducting channels are presented. It is noted that subband separation in excess of 100 meV is to be expected for n-Si if appropriate surface orientation and doping concentration. Even larger separations may be expected for various compound semiconductors. The Fermi level has been calculated for different channel dopings at 4.2K, 77K and 300K. The channels are shown to be degenerate under certain conditions in spite of the fact that a 3D system would be non-degenerate at the same temperature and concentration. Theory is presented for transverse voltage amplifying devices. This structure constitutes a new class of semiconductor devices. (Author)

Descriptors :   *N type semiconductors, *Silicon, *Field effect transistors, *Charge transfer, *Junction transistors, Gallium arsenides, Indium phosphides, Mosfet semiconductors, Indium compounds, Concentration(Chemistry), Indium antimonides, Semiconductor devices, Surface properties, Configurations, Doping, Voltage, Materials, Density, Transverse, Fermi surfaces, Semiconductors, Amplifiers, Channels, Junctions

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE