Accession Number : ADA132373

Title :   The BJT-JFET, A Novel Merged Device Structure.

Descriptive Note : Rept. no. 3 (Final),

Corporate Author : HAWAII UNIV AT MANOA HONOLULU DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Tan,Leng-Seow ; Holm-Kennedy,James W

PDF Url : ADA132373

Report Date : Jul 1983

Pagination or Media Count : 28

Abstract : A novel semiconductor device, the BJT-JFET, is described. The fabrication of the device is described and the device characteristics are explained in terms of the fully merged nature of the device and the self-biasing effects of the distributed collector current on the collector/channel base bias. A simple analytical model is developed. The results are consistent with the conceptual understanding of the operation of the device. (Author)

Descriptors :   *Field effect transistors, *Junction transistors, *Bipolar transistors, *Metal oxide semiconductors, Mathematical models, Gates(Circuits), Semiconductor devices, Emitters, Phosphorus, Bases(Transistors), Boron, Gain

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE