Accession Number : ADA132450

Title :   A Rectangular Gate Merged MOSBJT.

Descriptive Note : Rept. no. 1 (Final),

Corporate Author : HAWAII UNIV AT MANOA HONOLULU DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Okada,David ; Holm-Kennedy,James W

PDF Url : ADA132450

Report Date : Jul 1983

Pagination or Media Count : 29

Abstract : The design, fabrication, and device characteristics of a rectangular gate MOSBJT are described. The characteristics are explained in terms of the merged character of the device and the self-biasing effects of the distributed collector current on the collector channel/base bias. For sufficiently high collector currents a portion of the collector channel is self-biased resulting in a decreased beta. The active area of the device is then controlled by the device operating bias. (Author)

Descriptors :   *Junction transistors, *Bipolar transistors, *Metal oxide semiconductors, *Silicon, *Gates(Circuits), Electric contacts, Silicon dioxide, Rectangular bodies, Distribution, Substrates, Aluminum, Masking, Bias, Sources

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE