Accession Number : ADA132571
Title : Donor Behavior in High-Purity Epitaxial InP.
Descriptive Note : Final technical rept. 1 Jun 78-30 Jun 80,
Corporate Author : WASHINGTON UNIV ST LOUIS MO SEMICONDUCTOR RESEARCH LAB
Personal Author(s) : Wolfe,C M ; Green,R T
PDF Url : ADA132571
Report Date : 02 Oct 1980
Pagination or Media Count : 86
Abstract : The paper presents the results of research undertaken to develop a technology for the improved growth of high-purity, epitaxial InP using the H2-In-PC13 process. A VPE reactor was fabricated and a general reactor model was developed. Based upon early growth runs and application of the reactor model, modifications were made in the standard growth procedures to obtain much higher purity.
Descriptors : *Indium phosphides, *Epitaxial growth, *Purification, *Fabrication, Crystal growth, Purity, Vapor phases, Manufacturing, Models, Chemical reactors
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE