Accession Number : ADA132571

Title :   Donor Behavior in High-Purity Epitaxial InP.

Descriptive Note : Final technical rept. 1 Jun 78-30 Jun 80,

Corporate Author : WASHINGTON UNIV ST LOUIS MO SEMICONDUCTOR RESEARCH LAB

Personal Author(s) : Wolfe,C M ; Green,R T

PDF Url : ADA132571

Report Date : 02 Oct 1980

Pagination or Media Count : 86

Abstract : The paper presents the results of research undertaken to develop a technology for the improved growth of high-purity, epitaxial InP using the H2-In-PC13 process. A VPE reactor was fabricated and a general reactor model was developed. Based upon early growth runs and application of the reactor model, modifications were made in the standard growth procedures to obtain much higher purity.

Descriptors :   *Indium phosphides, *Epitaxial growth, *Purification, *Fabrication, Crystal growth, Purity, Vapor phases, Manufacturing, Models, Chemical reactors

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE