Accession Number : ADA133114

Title :   Replicated CdTe Substrates.

Descriptive Note : Final rept. May 82-May 83,


Personal Author(s) : Lund,J ; Squillante,M ; Entine,G

PDF Url : ADA133114

Report Date : Sep 1983

Pagination or Media Count : 22

Abstract : There is now a critical need for large numbers of high quality single crystal CdTe substrates for LPE growth of HgCdTe to use in infrared focal plane array sensors. The CLEFT crystal growth process, originally used to grow thin GaAs single crystals of solar cell applications, potentially offers a practical solution to this problem. Therefore, to investigate this unique crystal growth process further, a proof of concept research program was carried out to determine if this attractive technique could be applied to CdTe. The result of this research has been the growth of 1 sq cm continuous CLEFT layer of CdTe over an appropriate CLEFT growth mask. This is proof that the needed lateral growth does occur for CdTe oriented in the (III) direction. The procedures used to achieve this are discussed in detail in this report.

Descriptors :   *Cadmium tellurides, *Single crystals, *Crystal growth, Thin films, Substrates, Fabrication, Epitaxial growth, Methodology, Vapor phases, Masking, Feasibility studies

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE