Accession Number : ADA133123

Title :   AlGaAsSb Vapor Phase Epitaxy and Laser Program.

Descriptive Note : Final technical rept. Oct 80-Oct 82,


Personal Author(s) : Chin,Raymond

PDF Url : ADA133123

Report Date : Jun 1983

Pagination or Media Count : 99

Abstract : As the transmission of glass optical fibers has been reduced to near the theoretical limits in the 1.2-1.6 micrometers wavelengths range, the interest in optical emitters and detectors operating in this spectral range has increased. Currently, state-of-the-art silica-based optical fibers have been produced with minimum loss of 0.2 dB/km at a wavelength of lambda = 1.55 micrometers. The dispersion at this wavelength is also extremely low (approx. 17 sp/nm-km). Emitters and detectors for this spectral region have been fabricated in two of the III-V quaternary materials systems; i.e., A1GaAsSb and InGaAsP. The emphasis of this program was to develop the metalorganic chemical vapor deposition (MOCVD) materials technology for the growth of A1GaAsSb-GaSb and A1GaAsSb-InAs for heterostructure devices. Described in this work is the successful demonstration of the hetero-epitaxy of lattice-matched GaAsSb-InAs, GaSb/InAs, GaA1Sb/GaSb with A1Sb mole fractions up to 0.37, and n- and p-type GaSb/GaSb structure by MOCVD. In addition, Schottky barrier photodiodes fabricated from material grown by MOCVD clearly show that high quality crystalline material can be obtained using this process.

Descriptors :   *Gallium alloys, *Epitaxial growth, *Vapor deposition, Aluminum, Arsenic, Antimony, Indium, Substrates, Fabrication, Organometallic compounds, Crystal lattices, Crystal growth, Schottky barrier devices, Vapor phases

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE