Accession Number : ADA133363
Title : Fiber Optic Light Emitting Diode.
Descriptive Note : Final rept. 23 Apr 79-1 Aug 80,
Corporate Author : ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER
Personal Author(s) : Dapkus,P D ; Ng,W ; Law,H D
PDF Url : ADA133363
Report Date : Aug 1980
Pagination or Media Count : 34
Abstract : Optimum conditions for the growth of lattice-matched double heterostructures from two material systems, GaInAsP/InP and GaAlAsSb/GaSb, are described. The quantum efficiency and power output of surface-emitting L.E.D.'s (1.3 micrometer and 1.55 micrometer) fabricated from both material systems are given. A model relating the fraction of injected electrons to the separation between the direct and indirect conduction band minima is used to explain the low quantum efficiency observed for the GaAlAsSb/GaSb L.E.D.'s. The spectral width, near and far field of typical 1.3 micrometer GaInAsP/InP L.E.D.'s were measured. Finally, the modulation bandwidth and coupling efficiency of a packaged device into an optical fiber with a numerical aperture of 0.2 are presented.
Descriptors : *Light emitting diodes, *Gallium compounds, *Epitaxial growth, Fabrication, Fiber optics transmission lines, Gallium arsenides, Indium phosphides, Antimony, Quantum efficiency, Conduction bands, Optical properties
Subject Categories : Fiber Optics and Integrated Optics
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE