Accession Number : ADA133593

Title :   Evaluation of Radiation Damage to Metal-Oxide-Semiconductor (MOS) Devices.

Corporate Author : GEO-CENTERS INC NEWTON UPPER FALLS MA

PDF Url : ADA133593

Report Date : Dec 1982

Pagination or Media Count : 10

Abstract : The purpose of these experiments was to provide qualitative and quantitative information on the effects of various hydrogen and nitrogen annealing treatments on the radiation hardness, or resistivity to damage, of MOS capacitors. Toward this end, the following tasks were performed: Construction of capacitor TO-5 packages for device evaluation; The experimental determination of the 1 MHz capacitance-voltage bias curves for both the pre- and post-irradiated capacitors; Evaluation of the change in Flat Band Voltage (Delta V sub fb) for the pre- and post-radiation stressed devices; Compilation of all 1 MHz data for cataloging purposes and the establishment of a benchmark for the new computer automated test system; and Reported data to the Contracting Officer's Technical Representative (COTR) on a case-by-case basis, as time was of the essence.

Descriptors :   *Metal oxide semiconductors, *Capacitors, *Radiation hardening, Data acquisition, Annealing, Hydrogen, Nitrogen, Irradiation, Radiation effects, Operational effectiveness, Electrical properties

Subject Categories : Radiation and Nuclear Chemistry
      Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE