Accession Number : ADA133852

Title :   Development of Short Gate Fet's.

Descriptive Note : Annual rept. Jun 80-Jun 81,

Corporate Author : HOWARD UNIV WASHINGTON DC DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Spencer,Michael G

PDF Url : ADA133852

Report Date : Jan 1983

Pagination or Media Count : 23

Abstract : A summary of initial work performed under Air Force contract 'Development of Short Gate Fet's' is presented. Approach taken toward fabrication of high speed fet's is discussed. Expected materials and fabrication problems are outlined. (Author)

Descriptors :   *Field effect transistors, *Gates(Circuits), *Gallium arsenides, Fabrication, Schottky barrier devices, Submillimeter waves, Epitaxial growth, Short range(Distance), High rate, Molecular beams, Air Force procurement, Chromium, Ion implantation, Q band, Space charge

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE